PART |
Description |
Maker |
FDMS004N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
FDMC86570L |
N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m
|
Fairchild Semiconductor
|
FDMC86340 |
N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ
|
Fairchild Semiconductor
|
FDD86326 |
N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
|
Fairchild Semiconductor
|
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
2741T 2741S |
T1/E1 Transformer Shielded HIGH FREQUENCY MAGNETICS T1/E1 Through Hole Shielded Transformers
|
BEL[Bel Fuse Inc.]
|
2745H2 2745AK2 |
T1/E1 Transformer Shielded 3.3V Powered, 10Mbps and Slew-Rate Limited, True RS-485/RS-422 Transceivers HIGH FREQUENCY MAGNETICS T1/E1 Through Hole Shielded Transformers
|
BEL[Bel Fuse Inc.]
|
165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc. COILCRAFT INC
|